Composition control of GaxIn1−xAs films grown by MBE onto InP substrates
- 15 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (10), 833-835
- https://doi.org/10.1063/1.91340
Abstract
The molecular beam epitaxial growth of the ternary alloy GaInAs onto (100) oriented InP substrates has been investigated with it being established that, although epitaxial film growth can be achieved over a wide range of substrate temperatures, high‐quality layers of composition simply related to the incident flux levels can only be grown in the narrow range Ts=400–430 °C. Film growth below Ts=400 °C was found to result in degradation of electrical properties, while deposition above Ts=430 °C resulted in compositional inhomogeneity.Keywords
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