Isoelectronicδdoping in a ZnSe superlattice: Tellurium as an efficient hole trap

Abstract

Spatially selective introduction of Te isoelectronic traps into ZnSe-based quantum-well structures allows the probing of this strongly binding center for excitons with direct microscopic insight. In particular, we show how the hole wave function is strongly localized at Te sites to an orbit size comparable to that of the unit cell. The electron wave function, Coulomb bound to the hole, is not measurably altered following the shrinkage of the hole orbit.