Organic Nonvolatile Memory Devices Based on Ferroelectricity

Abstract

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low‐cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field‐effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.