Growth of InAs by MOVPE using TBAs and TMIn
- 1 August 1990
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (8), 783-788
- https://doi.org/10.1007/bf02651385
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Growth of GaSb by MOVPESemiconductor Science and Technology, 1988
- Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and ratioJournal of Crystal Growth, 1988
- A simple reusable susceptor design for MOCVDJournal of Vacuum Science & Technology B, 1983