Growth of InAs by MOVPE: A comparative study using arsine, tertiarybutylarsine and phenylarsine
- 1 September 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 97 (2), 489-496
- https://doi.org/10.1016/0022-0248(89)90231-5
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Growth and transport properties of InAs epilayers on GaAsApplied Physics Letters, 1988
- Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxyApplied Physics Letters, 1987
- Proposal for strained type II superlattice infrared detectorsJournal of Applied Physics, 1987
- Electronic properties of InAsGaSb superlatticesSurface Science, 1980
- A two-dimensional simulation of a cooled, submicrometer indium arsenide Schottky-gate FETIEEE Transactions on Electron Devices, 1980
- Backside-illuminated InAsSb/GaSb broadband detectorsApplied Physics Letters, 1980
- Thin InAs epitaxial layers grown on (100) GaAs substrates by molecular beam depositionApplied Physics Letters, 1978
- Molecular Beam Epitaxial Growth of InAsJapanese Journal of Applied Physics, 1977
- In1−xGaxAs-GaSb1−yAsy heterojunctions by molecular beam epitaxyApplied Physics Letters, 1977
- Backside-illuminated InAs1−xSbx-InAs narrow-band photodetectorsApplied Physics Letters, 1977