Influence de la température sur les structures MOS en inversion
- 1 June 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 10 (3), 449-453
- https://doi.org/10.1016/0040-6090(72)90217-9
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- MOS and vertical junction device characteristics of epitaxial silicon on low aluminum-rich spinelSolid-State Electronics, 1970
- Temperature Dependence of Inversion-Layer Frequency Response in SiliconBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938