Temperature Dependence of Inversion-Layer Frequency Response in Silicon
- 1 March 1967
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 46 (3), 513-522
- https://doi.org/10.1002/j.1538-7305.1967.tb04232.x
Abstract
Conductance-voltage and capacitance-voltage curves of metal-oxide semiconductor (MOS) capacitors on n-type silicon were investigated in the temperature range between room temperature and 200C. Plots of the inversion-layer conductance versus r...Keywords
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