AlGaAs tunnel diode
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (11), 7267-7268
- https://doi.org/10.1063/1.325809
Abstract
An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high‐ and low‐band gap cells of a cascade solar‐cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.Keywords
This publication has 4 references indexed in Scilit:
- A two-junction cascade solar-cell structureApplied Physics Letters, 1979
- Integrated multijunction GaAs photodetector with high output voltageApplied Physics Letters, 1978
- Te and Ge — doping studies in Ga1−xAlxAsJournal of Electronic Materials, 1975
- Properties of Ge-doped GaAs and Alx Ga1−xAs, Sn-doped Alx Ga1−xAs and Si-Te-doped GaAsJournal of Electronic Materials, 1974