Integrated multijunction GaAs photodetector with high output voltage
- 1 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7), 629-631
- https://doi.org/10.1063/1.90443
Abstract
Integrated structures consisting of two P‐I‐N double heterostructure GaAs photodetectors, series connected by means of a tunnel junction, have been fabricated by molecular beam epitaxy. Open‐circuit output voltages, external power efficiencies, and fill factors were 1.777 V, 33.4%, and 0.83, respectively, for antireflection‐coated cells excited by ∼5 mW optical power from a focused DH AlGaAs laser emitting at λ=0.815 μm.Keywords
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