Electron mobility in InP

Abstract
Theoretical values of weak-field Hall mobility and Hall ratio of electrons in InP at 77K and 300K are presented for different impurity concentrations and compensation ratios. Calculations were done by an iterative method taking into account all the complexities of the band structure and the electron scattering mechanisms and using the most recent values of the physical constants. Calculated values are in close agreement with the recent experimental results.

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