Model for Electroluminescence in GaN

Abstract

A model to explain dc electroluminescence in GaN diodes is presented. The voltage applied to the diode is partially localized at sharp points and ridges at the cathode. Electrons, tunnel-injected into the active material at the points and ridges, gain sufficient kinetic energy in the high field to cause impact excitation of the luminescent center either directly or indirectly (electron-hole-pair impact excitation across the GaN gap with subsequent hole capture by the luminescent center).