Violet luminescence of Mg-doped GaN
- 15 March 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 22 (6), 303-305
- https://doi.org/10.1063/1.1654648
Abstract
The photoluminescent and electroluminescent properties of GaN–GaN:Mg diodes are described. Visible violet electroluminescence was observed with excitation voltages of 10–20 V with the emission peak in the region of 2.9 eV. The I‐V characteristics showed I ∞ V3 in the region where light was emitted, and the observed power efficiency was approximately 10−5. A photoluminescence peak at 2.9 eV provided additional evidence for an acceptor level, associated with the Mg impurity, about 0.5 eV above the valence band.Keywords
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