Transient photoconductivity in a-Si:H
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 635-638
- https://doi.org/10.1016/0022-3093(85)90738-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Mobile dislocation density during the deformation of KC1 single crystalsPhilosophical Magazine A, 1985
- Differential photocurrent transient measurements in a-Si:HJournal of Non-Crystalline Solids, 1983
- Effects of doping on transport and deep trapping in hydrogenated amorphous siliconApplied Physics Letters, 1983
- Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurementsPhysical Review B, 1983
- Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous SiliconPhysical Review Letters, 1981