Effects of doping on transport and deep trapping in hydrogenated amorphous silicon
- 1 October 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (7), 672-674
- https://doi.org/10.1063/1.94441
Abstract
We report a quantitative comparison of the trapping rates of carriers at charged and neutral dangling bonds in hydrogenated amorphous silicon (a‐Si:H). The data are obtained from time‐of‐flight photoconductivity studies of doped and undoped samples. The temperature dependence of the trapping rates, as well as the effect of boron doping on the hole drift mobility, is also reported.Keywords
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