Two-Terminal P-N Junction Devices for Frequency Conversion and Computation

Abstract

Design principles for semiconductor diodes are derived from the analysis of idealized p-n junctions. The analysis gives the superheterodyne conversion matrix and the large-signal admittance in terms of the small-signal diffusion admittances. Structures that minimize minority-carrier storage give minimum conversion loss under matched conditions in converting a high frequency to a low frequency, and are useful in logic circuits of computers. Examples are the emitter-base diode of a transistor and a small bonded or point contact. Amplification and improved power-handling capabilities can be obtained in converting a low frequency to a high frequency, if the geometry favors storage of minority carriers near the junction. Such structures can also be used as pulse amplifiers.