Direct Exciton Spectrum in Diamond and Zinc-Blende Semiconductors
- 10 August 1970
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 25 (6), 373-376
- https://doi.org/10.1103/physrevlett.25.373
Abstract
We present a new method to investigate the exciton spectrum in the case of degenerate bands. Using symmetry considerations and second-order perturbation theory, we obtain a simple analytical expression for the binding energy as a function of the band parameters. Direct excitons in group IV elements, III-V compounds, and II-VI compounds can be investigated by this method. Results are given for Ge, GaAs, InSb, ZnSe, and CdTe.Keywords
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