Electron energy loss spectroscopy studies of the Si-SiO2 interface

Abstract

We have performed, for the first time, measurements of the electronic structure of the Si‐SiO₂ interface with electron energy loss spectroscopy (ELS) in connection with argon‐ion sputtering. We have measured the depth profiles of both the 5.1‐ and 7.2‐eV ELS peaks, which have been previously observed for both the Si surface with oxygen adsorbed and SiO₂ with defects present. We have found that the intensities of these peaks, especially that of the 5.1‐eV peak, show a maximum at the Si‐SiO₂ interface. This suggests that these ELS peaks come from special bonding configurations characteristic of the connective layer between Si and SiO₂ at the interface.