Charge-pumping spectroscopy with pulsed interface probing
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (1), 267-272
- https://doi.org/10.1109/16.43824
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A pulsed interface-probing technique for MOS interface characterization at mid-gap levelsIEEE Transactions on Electron Devices, 1988
- A general model for interface-trap charge-pumping effects in MOS devicesSolid-State Electronics, 1985
- A reliable approach to charge-pumping measurements in MOS transistorsIEEE Transactions on Electron Devices, 1984
- Determination of the spatial variation of interface trapped charge using short-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969
- CONTRIBUTIONS OF SURFACE STATES TO MOS IMPEDANCEApplied Physics Letters, 1967