Modification of intrinsic strain at lattice-matched GaInAs/InP interfaces

Abstract

We have demonstrated, by high-resolution x-ray diffraction, the presence of strained regions on the scale of about one molecular layer at each interface in lattice-matched GaInAs/InP superlattices grown by gas source molecular beam epitaxy. The existence of these interfacial regions results only from the different group V element in each interface layer of the superlattice and the lack of any significant diffusion between atomic planes during, or subsequent to epitaxy. We have demonstrated that the intrinsic strain at the interfaces of lattice-matched GaInAs/InP superlattices can be modified on the same near molecular layer scale by altering the beam sequence during growth.