A study of p-type doping for AlGaInP grown by low-pressure MOCVD
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4), 613-617
- https://doi.org/10.1016/0022-0248(88)90592-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Room-temperature continuous-wave operation of a 640 nm AlGaInP visible-light semiconductor laserElectronics Letters, 1987
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- Magnesium doping of (Al,Ga)As in metalorganic chemical vapor depositionJournal of Applied Physics, 1986
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- Magnesium-doped GaAs and Alx Ga1−x As by molecular beam epitaxyJournal of Applied Physics, 1972