The growth of Magnesium-doped GaAs by the Om-Vpe process
- 1 May 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (3), 507-524
- https://doi.org/10.1007/bf02650861
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High-efficiency organometallic vapor phase epitaxy AlGaAs/GaAs monolithic cascade solar cell using metal interconnectsApplied Physics Letters, 1982
- Absorption and stimulated emission in an AlAs-GaAs superlatticeApplied Physics Letters, 1981
- GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applicationsJournal of Crystal Growth, 1981
- High-efficiency AlGaAs/GaAs concentrator solar cells by organometallic vapor phase epitaxyJournal of Applied Physics, 1980
- 700-h continuous room-temperature operation of AlxGa1−xAs-GaAs heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1979
- GaAs m.e.s.f.e.t. prepared by organometallic chemical vapour depositionElectronics Letters, 1979
- Beryllium doping and diffusion in molecular-beam epitaxy of GaAs and AlxGa1−xAsJournal of Applied Physics, 1977
- Diffusion of Impurities in Semiconducting Substitutional Solid Solutions InAs1−ηPη and GaAs1−nPηPhysica Status Solidi (b), 1969
- Vapour pressures of cyclopentadiene and Bis(cyclopentadienyl)magnesiumAustralian Journal of Chemistry, 1965
- Vapor Deposition of Pure Ruthenium Metal from RuthenoceneInorganic Chemistry, 1964