EPR investigation of the Si-SiO2 bonding layer
- 16 November 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 44 (1), K1-K3
- https://doi.org/10.1002/pssa.2210440144
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Multiple thermal oxidation of silicon and the electrophysical properties of silicon oxide films and the Si-SiO2 bonding layerThin Solid Films, 1976
- Paramagnetic defects in silicon/silicon dioxide systemsSurface Science, 1976
- Oxidation, defects and vacancy diffusion in siliconPhilosophical Magazine, 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965