Temperature behavior of stimulated emission delays in GaAs diodes and a proposed trapping model
- 1 April 1968
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 4 (4), 155-160
- https://doi.org/10.1109/jqe.1968.1075052
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- CONTINUOUS OPERATION OF GaAs JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200°KApplied Physics Letters, 1967
- Delay of the stimulated emission in GaAs laser diodes near room temperatureSolid-State Electronics, 1967
- HERMITE-GAUSSIAN MODE PATTERNS IN GaAs JUNCTION LASERSApplied Physics Letters, 1967
- Improved Room-Temperature Laser Performance in GaAs Diffused-Junction DiodesJournal of Applied Physics, 1967
- Turn-on delay in gallium arsenide lasers operated at room temperatureIEEE Transactions on Electron Devices, 1965
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- DELAY BETWEEN CURRENT PULSE AND LIGHT EMISSION OF A GALLIUM ARSENIDE INJECTION LASERApplied Physics Letters, 1964
- The speed of response of GaAs lasersPhysics Letters, 1964
- Simple Apparatus for Maintaining Temperatures between 77°K and 300°KReview of Scientific Instruments, 1957