Influence of Deposition Temperature on the Structure of Si3N4Thin Film Prepared by MWECR-PECVD
- 1 October 2004
- journal article
- Published by IOP Publishing in Plasma Science and Technology
- Vol. 6 (5), 2485-2488
- https://doi.org/10.1088/1009-0630/6/5/011
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Ion Density Distribution in an Inductively Coupled Plasma ChamberPlasma Science and Technology, 2004
- Intertwisted fibrillar diamond-like carbon films prepared by electron cyclotron resonance microwave plasma enhanced chemical vapour depositionChinese Physics, 2003
- Computer-Controlled System for Plasma Ion Energy Auto-AnalyzerPlasma Science and Technology, 2003
- Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVDActa Physica Sinica, 2003
- Ion energy distribution in an ECR plasma chamberVacuum, 1999
- Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVDApplied Surface Science, 1999