Luminescence properties of Be-implanted GaAs1−xPx (x∼0.38)

Abstract

Radiative recombination in Be‐implanted GaAs_1−xP_x (x∼0.38) is examined using low‐temperature photoluminescence and electroluminescence. A luminescence band at 1.955 eV (6 °K) is related to recombination from the conduction band to neutral Be acceptors. The temperature dependence of this emission band indicates the binding energy of the Be acceptor is 35±3 meV. Annealing the Be‐implanted GaAs_1−xP_x with SiO₂ or Si₃N₄ encapsulation at 900 °C is shown to reorder the lattice and produce excellent optical activation. Photoluminescence measurements in conjunction with successive layer removal indicate the implanted Be does not diffuse significantly during the anneal.