Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
- 13 March 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (12), 1694-1696
- https://doi.org/10.1063/1.1355011
Abstract
Defects in doped InGaAsN grown by gas source molecular-beam epitaxy are examined through Hall effect measurements. The behavior of the carrier concentration as a function of N content and doping concentration is examined. A Fermi statistics model based upon the experimental results has identified the energy levels and concentrations of three traps in as-grown InGaAsN.
Keywords
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