Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy
- 1 August 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (3), 280-282
- https://doi.org/10.1063/1.94326
Abstract
A selectively doped InP/In0.53Ga0.47As heterostructure has been prepared by chloride transport vapor phase epitaxy. Hall and Subnikov‐de Haas measurements revealed the existence of a high mobility, two‐dimensional electron gas at the interface of this heterostructure. Enhanced electron mobilities were as high as 106 000, 71 200, and 9 400 cm2/Vs at 4.2, 77, and 300 K, respectively. These indicate the excellent interface properties of the selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy.Keywords
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