Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor deposition
- 15 May 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (10), 877-879
- https://doi.org/10.1063/1.92932
Abstract
We report, from Shubnikov‐de Haas and cyclotron resonance experiments, the first observation of a two‐dimensional, high‐mobility electron gas in a selectively doped In0.53Ga0.47 As‐InP heterojunction grown by metalorganic chemical vapor deposition. Several parameters of the electronic system under consideration are determined.Keywords
This publication has 13 references indexed in Scilit:
- Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctionsApplied Physics Letters, 1981
- High Electron Mobility Transistor LogicJapanese Journal of Applied Physics, 1981
- The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBEJapanese Journal of Applied Physics, 1981
- 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVDElectronics Letters, 1981
- High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctionsElectronics Letters, 1981
- Single-interface enhanced mobility structures by metalorganic chemical vapour depositionElectronics Letters, 1981
- Growth of Ga0.47In0.53As on InP by low-pressure m.o. c.v.d.Electronics Letters, 1980
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967