Effects of various encapsulating films on laser recrystallization of silicon on SiO2
- 1 December 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12), 9038-9042
- https://doi.org/10.1063/1.330412
Abstract
Single‐crystal silicon‐on‐oxide was produced by laser recrystallization of a 0.6‐μm polysilicon film deposited on 1 μm of thermal SiO2. Oriented growth commenced where the polysilicon film was in contact with the silicon substrate, and proceeded laterally over the fully recessed SiO2. Typical dimensions of the single‐crystal silicon‐on‐oxide film are 25 μm by 7 mm. The laser annealing was done with several different encapsulating films above the polysilicon, including 11.0, 16.4, and 32.9 nm of Si3N4, 25 nm of SiO2, 25 nm SiO2 +32.9 nm Si3N4, and uncapped samples. In addition, samples were laser annealed with and without an 1100 °C N2 preanneal of the structure. The 1100 °C anneal reduced the nucleation of misoriented grains in all samples, and extended the range of useable powers for the Si3N4 capped samples. The 32.9‐nm Si3N4 cap produced the smoothest film and the most efficient coupling of the laser light into the silicon. The maximum distance of single‐crystal growth was the same for all nitrogen‐annealed samples, and showed a weak dependence on the melt width induced by the beam used for recrystallization. TEM micrographs of the recrystallized silicon show that the defects lie predominantly in the 110 direction. Their density increases away from the seed region, and they coalesce to form the grain boundaries at the transition to polysilicon growth.Keywords
This publication has 9 references indexed in Scilit:
- The microstructure of laterally seeded silicon-on-oxideJournal of Electronic Materials, 1982
- MOSFET's on Silicon prepared by moving melt zone recrystallization of encapsulated polycrystalline Silicon on an insulating substrateIEEE Electron Device Letters, 1981
- Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding ProcessJournal of the Electrochemical Society, 1981
- Surface Stabilization of Polycrystalline‐Silicon Films during Laser RecrystallizationJournal of the Electrochemical Society, 1981
- Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulatorsApplied Physics Letters, 1981
- Surface rippling induced in thin films by a scanning laserJournal of Applied Physics, 1981
- Ring oscillators fabricated in laser-annealed silicon-on-insulatorIEEE Electron Device Letters, 1980
- Residual stress in silicon nitride filmsJournal of Electronic Materials, 1976
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971