Pulsed laser evaporation of Cd3As2
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 339-341
- https://doi.org/10.1063/1.94752
Abstract
A pulsed Nd:yttrium aluminum garnet (YAG) laser, power density 4–10×107 W/cm2, was used to prepare thin films of Cd3As2 by evaporation onto room-temperature substrates. The net deposition rate was 105 Å/s. The film microstructure was composed of amorphous agglomerates, 600–2000 Å in size. The films obtained with power density 7–10×107 W/cm2 were stoichiometric and they had electron concentrations of 2.6–10×1018 cm−3 and electron mobilities of 210–520 cm2/Vs at 300 K.Keywords
This publication has 11 references indexed in Scilit:
- Epitaxial growth of Hg0.7Cd0.3Te by laser-assisted depositionApplied Physics Letters, 1983
- Thermal and pulsed laser evaporation of single phase AsxP1−x alloysApplied Physics Letters, 1983
- Growth of HgCdTe films by laser induced evaporation and depositionJournal of Vacuum Science and Technology, 1982
- Pulsed laser evaporated SnO2 filmsJournal of Crystal Growth, 1982
- Homoepitaxial superlattices with nonoriented barrier layersSolid State Communications, 1981
- Dynamics of laser-induced vaporization for ultrafast deposition of amorphous silicon filmsApplied Physics Letters, 1981
- Mechanism of condensation of heteroepitaxial A3B5 layers pulse of moderate powerCrystal Research and Technology, 1981
- Nucleation processes of Cd3As2 films on sodium chloride substratesJournal of Crystal Growth, 1980
- Semiconducting Compounds of the AII BV GroupAnnual Review of Materials Science, 1975
- Mass Spectrometric Study of the Nonstoichiometric Vaporization of Cadmium Arsenide1The Journal of Physical Chemistry, 1964