Abstract
Large faulted dislocation loops are grown in thin foils of nickel at 450°c by electron irradiation in the beam of a high voltage electron microscope. Loop size is directly proportional to time, implying that surfaces are the dominant sinks for interstitials. A model of loop growth under these conditions is developed and predicts a growth rate in agreement with that observed. This paper is published by permission of the Central Electricity Generating Board.