Luminescence and optical absorption of implanted nitrogen in GaP
- 1 July 1971
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 9 (13), 1037-1040
- https://doi.org/10.1016/0038-1098(71)90457-1
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- implantation of Bi into GaP. II. channeling studiesRadiation Effects, 1970
- ion implantation of bismuth into GaP. I. photoluminescenceRadiation Effects, 1970
- Optimisation of efficiency of shallow reflectorsElectronics Letters, 1969
- EFFICIENT GREEN ELECTROLUMINESCENCE IN NITROGEN-DOPED GaP p-n JUNCTIONSApplied Physics Letters, 1968
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966