The Effect of Oxygen in Cosputtered (Titanium + Silicon) Films
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporationJournal of Applied Physics, 1982
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- Silicide formation in thin cosputtered (titanium + silicon) films on polycrystalline silicon and SiO2.Journal of Applied Physics, 1980