Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivity
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (11), 1019-1021
- https://doi.org/10.1063/1.91749
Abstract
Direct measurement of solid phase epitaxial crystallization during cw laser annealing of ion‐implanted silicon is reported. The measurement technique utilizes optical interference effects between reflected light from the sample surface and from the epitaxial growth plane to time‐resolve the growth process with high spatial resolution. Laser‐induced solid phase epitaxial growth was monitored for two values of incident laser power; corresponding epitaxial growth rates and calculated surface temperatures are given.Keywords
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