Efficient high-speed direct modulation in p-doped In0.35 Ga0.65As/GaAs multiquantum well lasers
- 1 January 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (23), 2141-2143
- https://doi.org/10.1049/el:19921374
Abstract
The authors demonstrate p-type modulation-doped strainedlayer In0.35 Ga0.65As/GaAs multiquantum well lasers which achieve a 3dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50mA in a simple 3 × 200 μm2 mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.Keywords
This publication has 1 reference indexed in Scilit:
- 16-GHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide structurePublished by SPIE-Intl Soc Optical Eng ,1992