Preparation and analysis of the negative resistance characteristic in an amorphous silicon and silicon–carbide single-barrier device
- 28 November 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (22), 2815-2817
- https://doi.org/10.1063/1.112575
Abstract
The characteristics of negative differential resistance in an amorphous silicon and silicon–carbide single-barrier device have been experimentally observed at room temperature. Based on the calculated and measured results, the barrier thickness is the important factor in determining the current–voltage characteristics of this device. In addition, the effective mass and the series resistance of amorphous materials are larger than that of crystalline materials. Thus the behavior of negative differential resistance of an amorphous silicon single-barrier device would be different from that of single-crystalline devices.Keywords
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