An amorphous silicon/silicon-carbide double barrier structure with 2.66 peak to valley current ratio negative resistance
- 1 August 1992
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (3), 1178-1179
- https://doi.org/10.1063/1.351798
Abstract
Amorphous silicon/silicon‐carbide double barrier structure with 2.66 peak to valley ratio single negative resistance and 1.146/1.174 double negative resistance under room temperature are studied. Theoretical analysis and experimental investigation employed to raise peak to valley current ratio and to obtain multiple negative resistances current‐voltage curve are also included.Keywords
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