Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors
- 11 May 2011
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 11 (5), 1925-1927
- https://doi.org/10.1021/nl200017f
Abstract
Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conductance and energy barriers up to 250 meV.Keywords
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