InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 mu m

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Abstract
The first electrooptic waveguide switch based on voltage-controlled transfer of electrons into multiple quantum wells is demonstrated. This mechanism is named barrier, reservoir, and quantum well electron transfer (BRAQWET) In GaAs-InAlAs quantum wells it provides a large modulation of refractive index at 1.55 mu m with multigigahertz switching capability. The BRAQWET X-switch is free from heating and speed limitations associated with current injection. Beam propagation method (BPM) calculations suggest that the crosstalk performance of this preliminary device demonstration can be significantly enhanced by changes in waveguide geometry.