High-field mobility effects in reoxidized nitrided oxide (ONO) transistors
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (3), 607-613
- https://doi.org/10.1109/16.123485
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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