Optical measurement of surface recombination in InGaAs quantum well mesa structures
- 25 July 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (4), 302-303
- https://doi.org/10.1063/1.99902
Abstract
Surface recombination of optically created electron-hole plasma in InGaAs/InP quantum well mesa structures formed by chemical beam epitaxy followed by anisotropic plasma etching is observed optically by a picosecond pump-probe method. The exponential carrier lifetime in 3.3-μm-diam structures is reduced from 31 ns as measured for large diameters to 5.5 ns. We ascribe this reduction to a surface recombination velocity of 1.2×104 cm/s. The surface recombination velocity is about two orders of magnitude smaller than those reported for bulk GaAs layers exposed to air.Keywords
This publication has 9 references indexed in Scilit:
- Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wellsApplied Physics Letters, 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- 1.55-μm optical logic étalon with picojoule switching energy made of InGaAs/InP multiple quantum wellsApplied Physics Letters, 1987
- Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposureApplied Physics Letters, 1986
- Speed and effectiveness of windowless GaAs étalons as optical logic gatesApplied Physics Letters, 1986
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Recombination at semiconductor surfaces and interfacesSurface Science, 1983
- Application of scanning electron microscopy to determination of surface recombination velocity: GaAsApplied Physics Letters, 1975
- Investigation of surface recombination on epitaxial GaAs filmsPhysica Status Solidi (a), 1973