Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures
- 1 August 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (8), 1465-1471
- https://doi.org/10.1016/0038-1101(94)00269-l
Abstract
No abstract availableKeywords
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