Fermi Surface and Electronic Structure of Indium

Abstract

The available cyclotron-resonance, size-effect, and de Haas-van Alphen data in indium are compared with the geometry of the Fermi surface defined by secular equations of up to sixth order. The principal Fourier coefficients appearing in the secular equation are found from a simple form factor with a single adjustable parameter. The possible topologies of the Fermi surface are considered systematically in terms of structure plots appropriate to the points of high symmetry in the zone. It is found that a form factor consistent with transport properties, and which accurately reproduces the experimental dimensions on the $\beta$-arms, is sufficiently strong to remove all but minute, disconnected remanants of the $\alpha$-type arms near the symmetry points $K$. Band structure, density of states, and cyclotron masses are calculated, and the electron-phonon enhancement of these and of the specific-heat mass is estimated from the final form factor.