Lateral photodetectors on semi-insulating InGaAs and InP
- 15 January 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (2), 157-158
- https://doi.org/10.1063/1.95720
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer techniqueApplied Physics Letters, 1985
- Semi-insulating In0.53Ga0.47As by Fe dopingJournal of Crystal Growth, 1983