High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer technique
- 1 January 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (1), 78-80
- https://doi.org/10.1063/1.95803
Abstract
Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate‐transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 Ω cm, and samples with resistivities within 5% of this value have been grown.Keywords
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