Enhanced Photoelectron Emission Between 200 and 1300 Å
- 1 March 1966
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 37 (3), 338-340
- https://doi.org/10.1063/1.1720174
Abstract
The photoelectric yield of a metal has been shown to increase with increasing angle of incidence of the radiation. The reflected radiation is reused to cause further photoemission until the incident radiation is entirely absorbed. Using an eighteen sided aluminum polygon to totally absorb the radiation, the photoelectric yield of the polygon compared to that of a single plate used at normal incidence was increased by a factor of 5.5 at 209 Å and by 40% at 1216 Å. The yield of the polygon cathode was in excess of 16% between 200 and 1000 Å with a maximum yield of 28% at 350 Å.This publication has 2 references indexed in Scilit:
- Photoelectric Yield of Aluminum from 300 to 1300 ÅReview of Scientific Instruments, 1965
- Photoelectric Yields for Oblique Incidence of Extreme Ultraviolet Radiation*Journal of the Optical Society of America, 1965