Interfacial recombination velocity determination in In 0.5Ga0.05P/GaAs
- 1 March 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (3), 1288-1292
- https://doi.org/10.1063/1.323773
Abstract
In this paper, we describe a one‐wafer technique for detrermining the interfacial recombination velocity at III–V heterojunctions. The recombination velocity is determined from the relationship between the injected‐carrier lifetime and the spacing between a p‐n homojunction and a heterojunction interface in a single‐heterojunction structure. The interfacial recombination velocity of an In0.5Ga0.5P/GaAS interface is found by this method to be 2×104 cm/sec, which is a factor of 3 larger than that of an Al0.5Ga0.5As/GaAs interface.Keywords
This publication has 15 references indexed in Scilit:
- Low-threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experimentJournal of Applied Physics, 1976
- Vapor-grown cw room-temperature GaAs/InyGa1−yP lasersApplied Physics Letters, 1976
- Interfacial recombination at (AlGa)As/GaAs heterojunction structuresJournal of Applied Physics, 1976
- Interfacial lattice mismatch effects in III–V compoundsJournal of Crystal Growth, 1975
- Threshold temperature characteristics of double heterostructure Ga1−xAlxAs lasersJournal of Applied Physics, 1975
- Room-temperature heterojunction laser diodes from vapor-grown In1−xGaxP/GaAs structuresApplied Physics Letters, 1974
- Universal stain/etchant for interfaces in III-V compoundsJournal of Applied Physics, 1974
- Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructuresJournal of Applied Physics, 1974
- Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxyJournal of Applied Physics, 1973
- Spontaneous Radiative Recombination in SemiconductorsPhysical Review B, 1957