Analytical relations for determining the base transit times and forward-biased junction capacitances of bipolar transistors
- 31 August 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (8), 767-773
- https://doi.org/10.1016/0038-1101(85)90062-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Proper choice of the measuring frequency for determining fT of bipolar transistorsSolid-State Electronics, 1983
- MEDUSA--A Simulator for Modular CircuitsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1982
- An experimental determination of the forward-biased emitter-base capacitanceSolid-State Electronics, 1978
- Application of a charge-control model to high-voltage power transistorsIEEE Transactions on Electron Devices, 1976
- Measurement of emitter and collector series resistancesIEEE Transactions on Electron Devices, 1972
- Characteristics of two-region saturation phenomenaIEEE Transactions on Electron Devices, 1969