High-voltage 6H-SiC p-n junction diodes

Abstract

A chemical vapor deposition (CVD) process has been used to produce device structures of n‐and p‐type 6H‐SiC epitaxial layers on commercially produced single‐crystal 6H‐SiC wafers. Mesa‐style p‐n junction diodes were successfully fabricated from these device structures using reactive ion etching, oxide passivation, and electrical contact metallization techniques. When tested in air, the 6H‐SiC diodes displayed excellent rectification characteristics up to the highest temperature tested, 600 °C. To observe avalanche breakdown of the p‐n junction diodes, testing under a high‐electrical‐strength liquid was necessary. The avalanche breakdown voltage was 1000 V representing the highest reverse breakdown voltage to be reported for any CVD‐grown SiC diode.