Saturated electron drift velocity in 6H silicon carbide
- 1 November 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (11), 4823-4825
- https://doi.org/10.1063/1.323506
Abstract
The saturated electron drift velocity has been measured in epitaxial 6H silicon carbide layers. The saturation occurs at an electric field of approximately 2×105 V/cm. The saturated drift velocity is 2×107 cm/s at room temperature, i.e., a factor of 2 higher than in silicon.Keywords
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